MOOSE: A Physically Based Compact DC Model of SOI LDMOSFETs for Analogue Circuit Simulation
نویسندگان
چکیده
منابع مشابه
A numerical study of partial-SOI LDMOSFETs
The high-voltage and self-heating behavior of partial-SOI (silicon-on-insulator) LDMOSFETs were studied numerically. Different locations of the silicon window were considered to investigate the electrical and thermal effects. It is found that the potential distribution of the partial-SOI LDMOSFET with the silicon window under the drain is similar to that of standard junction isolation devices. ...
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ژورنال
عنوان ژورنال: IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
سال: 2004
ISSN: 0278-0070
DOI: 10.1109/tcad.2004.835125